BSS8402DWK document number: ds36349 rev. 4 - 3 1 of 9 www.diodes.com january 2015 ? diodes incorporated bss8402dw k new product advanced information complementary pair enh ancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = +25c q1 60v 5 @ v gs = 5v 150ma q2 -50v 10 @ v gs = -5v -100ma description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? general purpose interfacing switch ? power management functions ? analog switch features and benefits ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? esd protected gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot363 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish annealed over alloy 42 leadframe (lead free plating). solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.006 grams (approximate) ordering information (note 4) part number compliance case packaging BSS8402DWK-7 standard sot363 3,000/tape & reel BSS8402DWK-13 standard sot363 10,000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information date code key year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 code p r s t u v w x y z a b c d month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot363 top view top view internal schematic npk = product type marking code ym = date code marking for sat (shanghai assembly/ test site) = date code marking for cat (chengdu assembly/ test site) y or = year (ex: a = 2013) m = month (ex: 9 = september) shanghai a/t site chengdu a/t site y y m npk ym npk ym not recommended
BSS8402DWK document number: ds36349 rev. 4 - 3 2 of 9 www.diodes.com january 2015 ? diodes incorporated bss8402dw k new product advanced information maximum ratings ? total device (@t a = +25c, unless otherwise specified.) characteristic symbol value units power dissipation (note 5) p d 300 mw thermal resistance, junction to ambient(note 5) r ja 423 c/w power dissipation (note 6) p d 400 mw thermal resistance, junction to ambient(note 6) r ja 312 c/w operating and storage temperature range t j, t stg -55 to +150 c maximum ratings n-channel ? q 1 , 2n7002 section (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 60 v gate-source voltage continuous v gss 20 v drain current (note 5) continuous i d 150 ma maximum ratings p-channel ? q 2 , bss84 section (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -50 v gate-source voltage continuous v gss 12 v drain current (note 5) continuous i d -100 ma electrical character istics n-channel ? q 1 , 2n7002 section (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 60 ? ? v v gs = 0v, i d = 10a zero gate voltage drain current i dss ? ? 1.0 a v ds = 60v, v gs = 0v gate-body leakage i gss ? ? 10 a v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) 1.0 ? 2.5 v v ds = v gs , i d = 250a static drain-source on-resistance r ds(on) ? ? 3 5 v gs = 10v, i d = 0.20a v gs = 5v, i d = 0.15a forward transconductance g fs 80 ? ? ms v ds =10v, i d = 0.2a dynamic characteristics (note 8) input capacitance c iss ? 54.2 ? pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 4.2 ? pf reverse transfer capacitance c rss ? 2.7 ? pf switching characteristics (note 8) turn-on delay time t d(on) ? 3.3 ? ns v dd = 30v, i d = 0.2a, r l = 150 , v gen = 10v, r gen = 25 turn-on rise time t r ? 2.2 ? ns turn-off delay time t d(off) ? 18.5 ? ns turn-off fall time t f ? 2.1 ? ns
BSS8402DWK document number: ds36349 rev. 4 - 3 3 of 9 www.diodes.com january 2015 ? diodes incorporated bss8402dw k new product advanced information electrical character istics p-channel ? q 2 , bss84 section (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -50 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current i dss ? ? -15 a v ds = -50v, v gs = 0v gate-body leakage i gss ? ? 10 a v gs = 12v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) -0.65 ? -2.0 v v ds = v gs , i d = -1ma static drain-source on-resistance r ds (on) ? ? 10 v gs = -5v, i d = -0.1a forward transconductance g fs 50 ? ? ms v ds = -25v, i d = -0.1a dynamic characteristics (note 8) input capacitance c iss ? 48 pf v ds = -25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 3.3 pf reverse transfer capacitance c rss ? 2.0 pf switching characteristics (note 8) turn-on delay time t d(on) ? 3.3 ? ns v dd = -30v, i d = -0.27a, r gen = 50 , v gs = -10v turn-on rise time t r ? 2.5 ? ns turn-off delay time t d(off) ? 42.4 ? ns turn-off fall time t f ? 14.3 ? ns notes: 5. device mounted on fr-4 pcb, with minimum recommended pad layout 6. device mounted on 1? x 1? fr-4 pcb wi th high coverage 2oz. copper, single sided. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to product testing.
BSS8402DWK document number: ds36349 rev. 4 - 3 4 of 9 www.diodes.com january 2015 ? diodes incorporated bss8402dw k new product advanced information n-channel mosfet 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 01 2 3 45 v , drain-source voltage (v) figure 1 typical output characteristic ds i, d r ain c u r r en t (a) d v= 2.5v gs v= 3.0v gs v= 4.0v gs v= 5.0v gs v= 10v gs 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1 1.5 2 2.5 3 3.5 4 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ain c u r r en t (a) d v= 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 1 1.1 1.2 1.3 1.4 1.5 1.6 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) v= 5v gs v = 10v gs 1 1.5 2 2.5 3 3.5 4 4.5 5 2 4 6 8 10 12 14 16 18 20 v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) i = 200ma d i = 100ma d 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- r esistance ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v= 5v gs 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j r , d r ain-s o u r c e on-resistance (normalized) ds(on) v= 5v i = 100ma gs d v=v i = 300a gs d 10
BSS8402DWK document number: ds36349 rev. 4 - 3 5 of 9 www.diodes.com january 2015 ? diodes incorporated bss8402dw k new product advanced information 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 on-resistance variation with temperature j r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v=5v i = 100ma gs d v=v i = 300ma gs d 10 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j i= 1ma d i = 250a d v , gate threshold voltage (v) gs(th) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.3 0.6 0.9 1.2 1.5 v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i, s o u r c e c u r r e n t (a) s t= 25c a t = 150c a t = 125c a t= 85c a t = -55c a 1 10 100 0 5 10 15 20 25 30 35 40 v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c ti o n c a p a c ita n c e (pf) t c iss f = 1mhz c oss c rss 0.1 1 10 100 v , drain-source voltage (v) figure 11 soa, safe operation area ds i, d r ain c u r r en t (a) d r limited ds(on) t = 150c t = 25c j(max) a v = 10v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w
BSS8402DWK document number: ds36349 rev. 4 - 3 6 of 9 www.diodes.com january 2015 ? diodes incorporated bss8402dw k new product advanced information p-channel mosfet 0.0 0.1 0.2 0.3 0.4 0.5 0.6 012345 -v , drain -source voltage (v) figure 1 typical output characteristics ds -i , d r ai n c u r r e n t (a) d v = -1.2v gs v = -1.5v gs v = -2.0v gs v = -2.5v gs v= -10v gs v = -5.0v gs v = -4.0v gs v = -3.0v gs 0 0.1 0.2 0.3 0.4 0.5 00.5 11.5 22.5 33.5 4 -v , gate-source voltage (v) gs figure 2 typical transfer characteristics -i , d r ai n c u r r e n t (a) d t = 150 c a t = 125 c a t = 85c a t = 25c a t = -55c a v = -5.0v ds 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 -i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) v = -5v gs v = -10v gs 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 1 2 3 4 5 6 7 8 9 101112 -v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) i = -100ma d 0.00 3.00 6.00 9.00 12.00 15.00 0 0.1 0.2 0.3 0.4 0.5 0.6 -i , drain source current (a) figure 5 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v= -4.5v gs 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50-25 0 25 50 75100125150 t , junction temperature ( c) j figure 6 on-resistance variation with temperature r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = -5v i = -100ma gs d v = -10v i = -300a gs d
BSS8402DWK document number: ds36349 rev. 4 - 3 7 of 9 www.diodes.com january 2015 ? diodes incorporated bss8402dw k new product advanced information 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j figure 7 on-resistance variation with temperature v= -10v i= a gs d -300m v=v i= a gs d -5 -100m r , d r ain-s o u r c e o n- r esistan c e ( ) ds(on) 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) figure 8 gate threshold variation vs. ambient temperature a v, g a t e t h r es h o ld v o l t a g e (v) gs(th) -i = 1ma d -i = 250a d 0 0.3 0.6 0.9 1.2 1.5 0 0.1 0.2 0.3 0.4 0.5 0.6 -v , source-drain voltage (v) figure 9 diode forward voltage vs. current sd -i , s o u r c e c u r r e n t (a) s t= -55c a t= 85c a t= 125c a t= 150c a t= 25c a 1 10 100 0 5 10 15 20 25 30 35 40 c , j u n c t i o n c a p a c i t a n c e (p f ) t -v , drain-source voltage (v) figure 10 typical junction capacitance ds c oss c rss f = 1mhz c iss 0.1 1 10 100 -v , drain-source voltage (v) figure 11 soa, safe operation area ds -i , d r ai n c u r r e n t (a) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w t = 150c t = 25c j(max) a v = -8v single pulse gs dut on 1 * mrp board 0.001 0.01 0.1 1 10 p = 100s w
BSS8402DWK document number: ds36349 rev. 4 - 3 8 of 9 www.diodes.com january 2015 ? diodes incorporated bss8402dw k new product advanced information package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot363 dim min max typ a 0.10 0.30 0.25 b 1.15 1.35 1.30 c 2.00 2.20 2.10 d 0.65 typ f 0.40 0.45 0.425 h 1.80 2.20 2.15 j 0 0.10 0.05 k 0.90 1.00 1.00 l 0.25 0.40 0.30 m 0.10 0.22 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c 1.9 e 0.65 a m j l d b c h k f x z y c e e g
BSS8402DWK document number: ds36349 rev. 4 - 3 9 of 9 www.diodes.com january 2015 ? diodes incorporated bss8402dw k new product advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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